ag2s:ag2s_thin_film_deposition
Feb. 08, 2005
Both
armantrout_et_al._j.vac.sci.tech._16_212_1979_.pdf and
reactively_sputtered_cu2s_films_and_cu2-cds_solar_cells.pdf
try to establish the optimal partial pressure of H2S during reactive sputter deposition of Cu2.0 - S1.0 film (chalcocite). My estimate of the values for partial pressure of H2S from these articles is 9×10-4 mbar and ~1×10-3 mbar, respectively (please verify, I do make mistakes!) I am planning to try these pressures during the sputtering run on Friday.
Analysis of the samples can be done with microprobe (using the SEM that used to stand on the 6th floor and is now moved to Amsterdam), resistivity measurements and x-ray for thicker films.
-Alex
ag2s/ag2s_thin_film_deposition.txt · Last modified: 2005/02/08 13:47 by 127.0.0.1