The Leybold Z-400 is an RF diode sputtering system equipped with 3 3“ targets. It has a background pressure of 1e-5 mbar and a deposition pressure of ca. 5e-3 - 8e-2 mbar. The 2 substrate tables are water cooled and can hold substrates up to 3”. The system is equipped with 3-channel gas blending for Ar, N2 and O2. The substrate tables can be RF-biassed for RF bias sputtering or ion etching.
WARNING! there is only 1 way to damage the Z-400, that is by changing the HV target selector while HV is on
. This will destroy the klystron tube and literally explode the capacitors surrounding it resulting in many months of downtime due to the very long delivery time of these expensive components.
HV off
button).The following materials are available:
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The digital version of the log sheet: z400logbook.pdf
Material | Date | User | Pressure | DC Potential | Flow | Time | Measurement | Result | Rate | Notes |
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Al | 20120522 | Boltje | 1kV | 50 sccm Ar | 148 s | X-ray | 22.5 nm | 9.1 nm/min | ||
Al | 20080514 | Jorina | 1kV | 25% Ar | 10min | X-ray | 80 nm | 8 nm/min | ||
Al | 20100520 | Boltje | 4e-3 mbar | 500V | ~25% Ar | 10 min | X-ray | 25.6 nm | 2.6 nm/min | |
Al | 20110606 | Boltje | 1kV | 50 sccm Ar | 4 min | X-ray | 38 nm | 9.5 nm/min | ||
Al | 20151007 | Timothy | 4.9e-3 mbar | 1kV | 49 sccm | 3 min | X-Ray | 30.0 nm | 10.0 nm/min | |
Al2O3 | 20120606 | Boltje | 1kV | 60 sccm Ar, 10% O2 | 5 min | X-ray | 9.2 nm | 1.8 nm/min | ||
Al2O3 | 20050127 | Gertjan | 1kV | 25% Ar | 2min | RBS | 8 nm | 4 nm/min | ||
Al2O3 | 20100519 | Boltje | 4e-3 mbar | 1kV | ~25% Ar | 15 min | X-ray | 32.4 nm | 2.2 nm/min | |
Al2O3 | 20111028 | Boltje | 0.5 kV | 50 sccm Ar | 15min | X-ray | 10.7 nm | 0.71 nm/min | ||
Ag | 20111014 | Boltje | 1kV | 50 sccm Ar | 2min | X-ray | 38.2 nm | 19.1 nm/min | ||
Au | 20120404 | Boltje | 1kV | 50 sccm Ar | 3min | X-ray | 45.6 nm | 15.2 nm/min | ||
Au | 20100330 | Boltje | 1kV | ~25 Ar | 3min | X-ray | 54.3 nm | 18.1 nm/min | ||
Au | 20110202 | Boltje | 1kV | 50 sccm Ar | 2min | X-ray | 29.1 nm | 14.6 nm/min | ||
Au | 20111206 | Boltje | 1kV | 50 sccm Ar | Xmin | X-ray | 51.4 nm | 15.0 nm/min | ||
Au | 20120402 | Boltje | 1kV | 50 sccm Ar | 80sec | X-ray | 19.2 nm | 14.4 nm/min | ||
Co | 20111207 | Boltje | 1kV | 50 sccm Ar | 545sec | X-ray | 63.1 nm | 6.95 nm/min | ||
Co | 20100331 | Boltje | 1kV | 25% Ar | 3min | X-ray | 16.5 nm | 5.5 nm/min | ||
Co | 20110104 | Boltje | 1kV | 50 sccm Ar | 10min | X-ray | 63.9 nm | 6.4 nm/min | ||
Cr | 20090709 | Boltje | 1kV | 25% Ar | 4min | X-ray | 30.0 nm | 7.5 nm/min | ||
Cr | 20141111 | Boltje | 3e-5 mbar | 1kV | 48 sccm | 80 s | X-Ray | 12.8 nm | 9.6 nm/min | |
Cu | 20120606 | Boltje | 1kV | 50 sccm Ar | 3min | X-ray | 37.6 nm | 12.5 nm/min | ||
Cu | 20100203 | Boltje | 1kV | 25% Ar | 5min | X-ray | 63 nm | 12.6 nm/min | ||
Cu | 20110111 | Boltje | 1kV | 50 sccm Ar | 5min | X-ray | 57.6 nm | 11.5 nm/min | ||
Cu | 20111206 | Boltje | 1kV | 50 sccm Ar | 5min | X-ray | 58.2 nm | 13.4 nm/min | ||
Cu | 20120404 | Boltje | 1kV | 50 sccm Ar | 5min | X-ray | 51.5 nm | 10.3 nm/min | ||
Cu-etch | 20120606 | Boltje | 50 sccm Ar | 3 min | X-ray | 2.1 nm | 0.7 nm/min | 60W | ||
Cu99.5Bi0.5 | 20150429 | Boltje | 3e-5 mbar | 1kV | 50 sccm Ar | 120s | X-Ray | 22.0 nm | 11.0 nm/min | |
Co | 20120404 | Boltje | 1kV | 50 sccm Ar | 10min | X-ray | 68.0 nm | 6.8 nm/min | ||
Fe | 20100407 | Boltje | 1kV | 25% Ar | 4min | X-ray | 22.0 nm | 5.5 nm/min | ||
MoGe | 2007 | Edoardo | 1kV | 25% Ar | 15mins* | X-ray | 84.2 nm | 5.6 nm/min | * no pauses, silver paint | |
MoGe | 20080204 | Ivan & Edo | 1kV | 25% Ar | 18 mins* | X-ray | 86 nm | 4.8 nm/min | *pauses (1min) | |
MoGe | 20110415 | Boltje | 1kV | 50 sccm Ar | 10min | X-ray | 55.3 nm | 5.5 nm/min | ||
MoGe* | 20110816 | Boltje | 1kV | 50 sccm Ar | 10min | X-ray | 51.5 nm | 5.2 nm/min | ||
MoGe | 20170327 | Jean-Pierre | 4.9e-3 mbar | 1kV | 49 sccm | 25 min | Profilometer | 137 nm | 5.5 nm/min | |
Nb65Ge35 | 2005 | Bas v Leewuwen | 1kV | 25% Ar | - | X-ray | - | 4.89 nm/min | ||
Nb65Ge35 | 2004 | Tibi | <3e-6 mbar | 1kV | 25% Ar | 6 min | X-ray | 28 nm | 4.67 nm/min | |
NbN | 20111212 | Boltje | 1.0 kV | 18% Ar, 10% N2* | x min | X-ray | 71.3 nm | 3.56 nm/min | * no blend | |
NbN | 20050126 | Gertjan | 1.7 kV | 18% Ar, 10% N2* | 8 min | RBS/X-ray | 60/75nm | 7.5-9 nm/min | * blend | |
NbN | 20050124 | Olaf | 1.0 kV | 18% Ar, 10% N2* | 1356s | X-ray | 49.5 nm | 2.2 nm/min | * no blend | |
NbN | 20080310 | Jorina | 1.0 kV | 18% Ar, 10% N2* | 22min 42s | X-ray | 55.15 nm | 2.4 nm/min | * no blend | |
Ni | 20110114 | Boltje | 1kV | 50 sccm Ar | 9min | X-ray | 58.8 nm | 6.5 nm/min | ||
Ni | 20140325 | Boltje | 3e-5 mbar | 1 kV | xx sccm | 5 min | X-Ray | 43.5 nm | 8.70 nm/min | |
NiGd | 20051024 | ? | 1kV | 25% Ar | X-ray | 67.5 nm | 6.8 nm/min | |||
Pt | 20110307 | Boltje | 0.5kV | 50 sccm Ar | 10 min | X-ray | 15.6 nm | 1.56 nm/min | ||
Pt | 20120612 | Boltje | 1kV | 50 sccm Ar | 10 min | X-ray | 67.9 nm | 6.8 nm/min | ||
Pt | 20061113 | Chris | 0.5kV | 25% Ar | 2mins | X-ray | 5.0 nm | 2.5 nm/min | ||
Py | 20161223 | Mechielsen | 1kV | 50 sccm Ar | AFM | 7.9 nm/min | ||||
Py | 20170220 | Casper | 4.8e-3 mbar | 1kV | 49 sccm | xx min | X-ray | 585 nm | 7.8 nm/min | |
Si | 20150422 | Boltje | 5e-3 mbar | 1 kV | 49 sccm | 3 min | X-Ray | 23.0 nm | 7.66 nm/min | |
Si3N4 | 20120522 | Boltje | 1kV | 50 sccm Ar | 469 s | X-ray | 36.0 nm | 4.6 nm/min | ||
Si3N4 | 20110609 | Boltje | 1kV | 50 sccm Ar | 8 min | X-ray | 31.8 nm | 4.0 nm/min | ||
Si3N4 | 20120522 | Boltje | 1kV | 50 sccm Ar | 469 s | X-ray | 36.0 nm | 4.6 nm/min | ||
SiO2 | 20131114 | Boltje | 5e-3 mbar | 1kV | 38 sccm | 5 min | X-Ray | 15.4 nm | 3.08 nm/min | |
Ti | 20160428 | Annette | 5.1e-3 mbar | 1kV | 49 sccm | 10 min | profilometer | 30 nm | 3.0 nm/min | |
W | 20060116 | Vincent | 1kV | 25% Ar | 10 min | X-ray | 38.5 nm | 3.9 nm/min |
* repaired target, with a few new Ge pieces
Material | Date | User | Pressure | DC Potential | Flow | Time | Measurement | Result | Rate | Notes |
---|---|---|---|---|---|---|---|---|---|---|