The ATC-1800 sputtering system is feature-rich 4-magnetron system with a large deposition pressure range, 10e-8 mbar range background pressure, substrate heating, substrate RF bias, variable working distance, in-situ gun tilt on all sources, substrate rotation and multi-channel gas blending. The gas inlets are connected to both the chamber and the sources. The system has a loadlock for high throughput and a vacuum chamber that is easily accessible for all non-standard work.
Check the logbook and reservation system to see if you are interfering with someone else. Fill in your name, date and time in the logbook before you start.
Source tilt angle, substrate angle and source-substrate distance are process parameters that should be mentioned here!
Current configuration:
Material | Date | Sample ID | Process parameters | Measured with | Result | Rate |
---|---|---|---|---|---|---|
Fe | 20161222 | on Si | 5mTorr, 400mA, 7 min | XRR | 41 nm | 5.8nm/min |
Fe | 20161107 | MgO/03 | 5mTorr, 200mA | X-ray + profilometer, 20 min, 10 min | 2 thicknesses: 51, 25nm | 2.52 nm/min |
Nd | 20161019+20 | MgO/021,22 | 5mTorr, 30mA, 25 & 50 min | XRR tough fit, profilometer | 25 & 50 nm approx | 1nm/min |
W | 20161011+12 | MgO/011,012 | 5 mTorr, 100mA, 25min, 37.5min | XRR | 1.48nm/min |
Older rates
Material | Date | Sample ID | Process parameters | Measured with | Result | Rate |
---|---|---|---|---|---|---|
Co | 20160111 | Co | 5 mTorr, 200 mA, 22 min | X-ray | 70.6 nm | 3.21/min |
Ag | 20150402 | Ag_cal | 5 mTorr, 100 mA, 5 min | X-ray | 39.0 nm | 7.8 nm/min |
Co | 20150402 | Co_cal | 5 mTorr, 200 mA, 15min | X-ray | 27.5 nm | 1.83 nm/min |
Cu | 20150402 | Cu_cal | 5 mTorr, 100 mA, 10 min | X-ray | 31.1 nm | 3.11 nm/min |
Nb | 20150402 | Nb_cal | 5 mTorr, 300 mA, 10 min | X-ray | 48.0 nm | 4.80 nm/min |
Ag | 20131104 | Ag10min | 5 mTorr, 100 mA, 10 min, 4 mm tilt | X-ray | 82.8 nm | 8.28 nm/min |
Co | 20130911 | Co_cal | 5 mTorr, 100 mA, 15 min | X-ray | 11.48 nm | 0.765 nm/min |
Cr | 20130911 | Cr_cal | 5 mTorr, 100 mA, 15 min | X-ray | 14.79 nm | 0.985 nm/min |
Cu | 20130911 | Cu_cal | 5 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 51.1 nm | 17.03 nm/min |
Cu | 20131104 | Cu3min | 5 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 49.8 nm | 16.6 nm/min |
Nb | 20131104 | Nb3min | 5 mTorr, 300 mA, 3 min, 4 mm tilt | X-ray | 14.8 nm | 4.93 nm/min |
Pd | 20131212 | Pd | 5 mTorr, 100 mA, 4 min, 4 mm tilt | X-ray | ? | 4.92 nm/min |
Py | 20130911 | Py_cal | 5 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 21.9 nm | 7.296 nm/min |
Py | 20130911 | Py_cal_3mT | 3 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 24.9 nm | 8.3 nm/min |
Py | 20131104 | Py3min_holder_a | 3 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 26.3 nm | 8.7 nm/min |
Py | 20131104 | Py3min_holder_b | 3 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 26.2 nm | 8.7 nm/min |
Py | 20131112 | Py1mTorr_holder | 1 mTorr, 350 mA, 3 min, 4 mm tilt | X-ray | 30.4 nm | 10.13 nm/min |
Py | 20131112 | Py2mTorr_holder | 2 mTorr, 350 mA, 3 min, 4 mm tilt | X-ray | 27.3 nm | 9.1 nm/min |
Py | 20131112 | Py4mTorr_holder | 4 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 22.1 nm | 7.4 nm/min |
Py | 20131212 | Py3mTorr_holder | 3 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 28.7 nm | 8.1 nm/min |
Py | 20131212 | Py3mTorr | 3 mTorr, 400 mA, 3 min, 4 mm tilt | X-ray | 26.7 nm | 7.6 nm/min |
The following materials are available
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In AuFe run 200511 AuFe current was kept constant at 100mA and Au current was changed to obtain 6, 4, 3 and 1.5% samples.
Linear approx. of concentration:
Assume for both Au and AuFe 1 nm = n atoms (Fe conc. is low, atoms have similar size), Au rate is rAu and AuFe rate is rAuFe.
The rates at 100mA have been measured by x-ray, they are rAu,100 and rAuFe,100.
Au source: rAu n atoms/min. AuFe source: 0.06 rAuFe n Fe atoms/min + 0.94 rAuFe n Au atoms/min
Fe/Au = Fe (atoms/min) / Au (atoms/min) = 0.06 rAuFe n / (0.94 rAuFe n + rAu n)
AuFe current is kept at 100mA: Fe/Au = 0.06 rAuFe,100 / (0.94 rAuFe,100 + rAu)
rAu = 0.06 rAuFe,100 (Au/Fe)-0.94rAuFe,100
IAu = 100 rAu / rAu,100 mA
Substrate
Mica, punched into 8 or 2.5 mm disks, freshly cleaved just before loading into ATC. Use a Cu holder for the mica, no adhesives
Pressure
20 mTorr setpoint, low -7 background
Ar Flow
24
Temperature
300deg C for deposition.
Current
200 mA for 20 minutes, then 2 minutes 45 mA
Voltage
Around 500 / 380
O2 flow
1
Heating/cooling rate
Heating: Heat up before deposition to 450 to bake out the dirt from chamber, holder & substrate. Radiative cooldown to 300 for deposition. Anneal for 1-2hrs postdeposition at 300. Cooldown radiative by switching off heat.
and
RMS roughness (and better roughness data if available)
I think a picture says more than 1000 roughness values..
Picture: stm image in air, with a lot of vibrations. Image size 740×640 nm. Shows the typical variation of terrace sizes you find on these samples.
Note 1: This recipe has been taken over (mutatis mutandis) from the attached article by kawasaki et al. Some details on the growth mechanism and origin of the triangular facets on the surface can be found in Lussem et aL, applied surface science 249 (2005) 197-202
Note 2: The parameters I used were not systematically optimized. I happened to stumble over something that worked good enough for me almost immediately. The low growth rate (high pressure/low current) of the last step is most probably important. Lower currents could be a thing to try, higher pressure is probably less useful (?). A higher growth rate for the first step might be advantageous, too (lower pressure?). Higher temperature might not be a bad idea, but going over 500 deg C is not advised, since mica starts to decompose at these temperatures.
Note 3: Film thickness has up to now not been calibrated. SEM imaging of film grown at room temperature in otherwise same process suggests around 80 nm thickness.
kawasaki-uchiki_sputter-flat-gold-mica_surf.sci.lett_1997.pdf
Presputter: Cu 5 min 100 mA, 25 sccm Ar, 5 mTorr, 100% rotation, 90 C (on lamp)
Sputter: Cu 60 min 400 mA, 25 sccm Ar, 5 mTorr, 100% rotation, 90 C (on lamp)