====== Processes ======
The masks are designed such that positive resists can be used. AZ5214 can also be used in 'image reversal' mode (that requires a reversal bake and a flood exposure). The optical resist processes are very uncritical because we make all small features with the e-beam.




===== MaN1410 ======
**Negative tone optical resist for single-layer lift-off** 
[[http://www.microresist.de/ma-N1400_400_2005_en.htm|Official resist page]]\\
This resist comes from DIMES (courtesy C. Martin, AMC). There is a TUDelft recipe for it [[http://www.ns.tudelft.nl/live/pagina.jsp?id=a7adccff-797e-4b22-8c9b-c113697f36ed&lang=en|here]]. Leiden recipe:
  - Make sure your Si/SiO2 chips are __clean__ (acetone does not always help, I use 10min O2 plasma etch in Plasmalab90)
  - Spin MaN1410 resist at 3000rpm (recipe 3 custom, 30-45sec gives ~1um). If resist does not stick, clean chips as described above
  - Bake, 90 C, at least 90 sec
  - Expose, 15 sec
  - Develop, MaD 533s for 15 sec (maybe even a bit less)
  - Rinse, DI water, 30 sec
  - Dry, N<sub>2</sub> (blow-dry the water)
  - If needed, postbake (90 C, x min)

Here is a graph of the time neede to dissolve the exposed parts in maD 533s, as function of exposure time. Dissolving unexposed parts takes 20 sec. UV meter gave 28 MW/cm<sup>2</sup>.

{{data:man1410developing.jpg?600}}


===== AZ5214E  ======
  - Spin AZ5214E resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
  - Bake, 90 C, 2.5 min
  - Expose, 15 sec
  - Develop, AZ312 MIF (metal ion free) developer : DI water 1:1, 40 sec (or just look at the process, don't time it) 
  - Rinse, DI water, 30 sec
  - Dry, N<sub>2</sub> (blow of the water very carefully for materials that give bad adhesion)
  - If needed, postbake (90 C, 3 min)














===== MaP 1205 ======
  - Spin MaP 1205 resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
  - Bake, 100 C, 30 sec
  - Expose, 15 sec
  - Develop, MaD 532 : DI water 9:1, 30 sec (just look at the process, don't time it) 
  - Rinse, DI water, 30 sec
  - Dry, N<sub>2</sub> (blow of the water very carefully for materials that give bad adhesion)
  - If needed, postbake (90 C, 3 min)
  - After etching: remove remaining resist with acetone

Here is a graph of the time needed for developing, as function of the maD-532-concentration. Exposure time was 15 sec (this is very uncritical). UV meter gave 29 MW/cm<sup>2</sup>.

{{data:mapdeveloping.jpg?600}}

===== HPR 205  ======
  - Spin HPR 205 resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
  - Bake, 90 C, 2.5 min
  - Expose, 15 sec
  - Develop, AZ312 MIF (metal ion free) developer : DI water 1:1, 40 sec (or just look at the process, don't time it)
  - Rinse, DI water, 30 sec
  - Dry, N<sub>2</sub> (blow of the water very carefully for materials that give bad adhesion)
  - If needed, postbake (90 C, 3 min)