//Please put the pdfs of the articles you think are relevant to our research here. "Edit page", use the reference format, and at the end press the "add images and other files" button (second from right on top button bar).//


===== Switching in Ag2S =====
  * K. Terabe, T. Nakayama, T. Hasegawa, and M. Aono\\ // Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction// \\ Journal of Applied Physics, vol.91, pp.10110-10114 (2002)\\ {{ag2s:japplphys_91_10110_terabe.pdf}}

  * T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, and M. Aono\\ //Nanometer-scale switches using copper sulfide // \\ Applied Physics Letters **82**, 3032 (2003)\\ {{ag2s:sakamoto_et_al._apl_82_3032_2003_.pdf}}

  * K. Terabe, T. Nakayama, T. Hasegawa, and M. Aono\\ //Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring// \\ Applied Physics Letters **80**, 4009 (2002)\\ {{ag2s:terabe_et_al._apl_80_4009_2002_.pdf}}

  * K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono\\ //Quantized conductance atomic switch// \\ Nature **433**, 47 (2005)\\ {{ag2s:terabe_et_al._nature_433_47_2005_.pdf}}

  * K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono\\ //Quantum point contact switch realized by solid electrochemical reaction// \\ RIKEN review **37**, 7 (2001)\\ {{ag2s:terabe_et_al._riken_review_37_7_2001_.pdf}}

  * Y. H. Ohashi, K. Ohashi, M. Terada and Y. Ohba\\ //Non-linear electrical transport in silver sulfide// \\ Journal of the Physical Society of Japan, **54**, pp.752-761 (1985)\\ {{ag2s:ohashi_et_al._j.phys.soc.jap._54_752_1985_.pdf}}

===== Switching in other systems =====

==== The Mother ====

  * S. R. Ovshinsky\\ //Reversible Electrical Switching phenomena in disordered structures// \\ Phys. Rev. Lett. 21, 1450 (1968)\\ {{ag2s:ovshinsky_prl_21_1450_1968_.pdf}}

==== Organic ====

  * L. Ma, S. Pyo, J. Quyang, Q. Xu and Y. Yang\\ //Nonvolatile electrical bistability of organic/metal-nanocluster/organic system// \\ Appl. Phys. Lett 82, 1419 (2003)\\ {{ag2s:ma_et_al._apl_82_1419_2003_.pdf}}

  * L. Ma, J. Liu and Y. Yang\\ //Organic electrical bistable devices and rewritable memory cells// \\ Appl. Phys. Lett 80, 2997 (2002)\\ {{ag2s:ma_et_al._apl_80_2997_2002_.pdf}}

==== Perovskites and oxides ====

  *A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel and D. Widmer\\ //Reproducible switching effect in thin oxide films for memory applications// \\ Appl. Phys. Lett 77, 139 (2000)\\ {{ag2s:beck_et_al._apl_77_139_2000_.pdf}}

  * Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck and S. J. Wind\\ //Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals// \\ Appl. Phys. Lett 78, 3738 (2001)\\ {{ag2s:watanabe_et_al._apl_78_3738_2001_.pdf}}

  * S. Q. Liu, N. J. Wu and A. Ignatiev\\ //Electric-pulse-induced reversible resistance change effect in magnetoresistive films// \\ Appl. Phys. Lett 76, 2749 (2000)\\ {{ag2s:liu_et_al._apl_76_2749_2000_.pdf}} \\ and the answer to it:
  * A. Baikalov, ..., and C. W. Chu\\ //Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface// \\ Appl. Phys. Lett 83, 957 (2003)\\ {{ag2s:baikalov_et_al._apl_83_957_2003_.pdf}}

==== Amorphous Si ====

  * J. Hu, A. J. Snell, J. Hajto, M. J. Rose and W. Edmiston\\ //Field-induced anomalous changes in Cr/a-Si:H/V thin film structures// \\ Thin Solid Films 396, 242 (2001)\\ {{ag2s:hu_et_al._thin_solid_films_396_242_2001_.pdf}}

  * J. Hajto, A. E. Owen, S. M. Gage, A. J. Snell, P. G. LeComber and M. J. Rose\\ //Quantized electron transport in amorphous-silicon memory structures// \\ Phys. Rev. Lett. 66, 1918 (1991)\\ {{ag2s:hajto_et_al_prl_66_1918_1991_.pdf}}

  * M. Jafar and F. Haneman\\ //Switching in amorphous-silicon devices// \\ Phys. Rev. B 49, 13611 (1994)\\ {{ag2s:jafar_and_haneman_prb_49_13611_1994_.pdf}}

==== Other ====

  * A. M. Song, M. Missous, P. Omling, I. Maximov, W. Seifert and L. Samuelson\\ //Nanometer-scale two-terminal semiconductor memory operating at room temperature// \\ Appl. Phys. Lett. 86, 042106-1 (2005)\\ {{ag2s:song_et_al._apl_86_042106_2005_.pdf}}



===== Switching theory =====

  * M. J. Rozenberg, I. H. Inoue and M. J. Sanchez\\ //Nonvolatile memory with multilevel switching: a basic model// \\ Phys. Rev. Lett. 92, 178302-1 (2004)\\ {{ag2s:rozenberg_et_al._prl_92_178302_2004_.pdf}}

===== Deposition of (sulfide) films =====

  * G. A. Armantrout, D.E. Miller, K.E. Vindelov and T.G. Brown\\ //Formation of thin Cu2S (chalcocite) films using reactive sputtering techniques// \\ Journal of Vacuum Science and Technology, **16**, p.212 (1979)\\ {{ag2s:armantrout_et_al._j.vac.sci.tech._16_212_1979_.pdf}}

  * Eddy van Hoecke, Marc Burgelman and Lieven Anaf\\ //Reactively sputtered Cu2S films and Cu2S-CdS solar cells// \\ 1984 IEEE\\ {{ag2s:reactively_sputtered_cu2s_films_and_cu2-cds_solar_cells.pdf}}

  * John Y. Leong and Jick H. Yee\\ //Hall effect in reactively sputtered Cu2S// \\ Appl. Phys. Lett 35(8), 15 October 1979\\ {{ag2s:hall_effect_in_reactively_sputtered_cu2s.pdf}}